Display device including electrostatic protection circuit and method of manufacturing the same

ABSTRACT

A display device in accordance with an exemplary embodiment of the inventive concept includes a data line transferring a drive signal to a display area; and an electrostatic transistor portion including a plurality of thin film transistors connected in parallel between the data line and a common ESD electrode. A cut-off voltage for turning off each of the thin film transistors is provided to a gate of each of the thin film transistors.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. non-provisional patent application claims priority under 35U.S.C. §119 to Korean Patent Application No. 10-2011-0087213, filed onAug. 30, 2011, the disclosure of which is incorporated by referenceherein.

BACKGROUND

The present inventive concept relates to display devices including anelectrostatic protection circuit and methods of manufacturing the same.

A liquid crystal display may include an array substrate having a thinfilm transistor, a color filter substrate, and a display panel. Thecolor filter substrate faces the array substrate and includes a colorfilter. The display panel includes liquid crystal formed between thearray substrate and the color filter substrate.

The array substrate may include gate lines, data lines, and a pixelregion including pixels. The gate lines may extend in a first directionand the data lines may extend in a second direction perpendicular to thefirst direction. Each pixel may include a thin film transistor TFTconnected to a gate line and a data line, and a liquid crystal capacitorconnected to the TFT. The pixels may be located in a matrix pattern.

A gate driver and a data driver may be disposed around the pixel region.The gate driver may be formed on the display panel using the sameprocess that was used to form the TFT. The gate driver generates scansignals for application to the gate lines. The data driver may beimplemented in a chip form. The data driver generates data signals forapplication to the data lines.

Static electricity may be generated due to friction during manufacturingor testing of the array substrate. Damage to display devices included inthe display panel may occur when the static electricity flows into theliquid crystal panel. An electrostatic protection circuit may beincluded in the display panel to prevent damage caused by the staticelectricity.

However, the electrostatic protection circuit provides a path of currentleakage. Consequently, the electrostatic protection circuit increasespower consumption while the display panel operates.

SUMMARY

A display device according to an exemplary embodiment of the inventiveconcept includes a data line transferring a drive signal to a displayarea and an electrostatic transistor portion including a plurality ofthin film transistors connected in parallel between the data line and acommon ESD electrode. A cut-off voltage for turning off each of the thinfilm transistors is supplied to a gate of each of the thin filmtransistors.

A method of manufacturing a display device including an electrostaticprotection circuit connected to a data line providing a drive signal toa display area includes forming a plurality of thin film transistorsconnected in parallel between the data line and a common ESD electrodeand forming a conductive line for applying a cut-off voltage for turningoff each of the thin film transistors to a gate of each of the thin filmtransistors.

A display device according to an exemplary embodiment of the inventiveconcept includes a plurality of data lines configured to receiverespective data voltages, a plurality of pixels connected respectivelyto the data lines, an electrode line, a plurality of bilateral diodes,and a plurality of thin film transistors. Each bilateral diode isconnected between a corresponding one of the data lines and theelectrode line. Each thin film transistor is connected in parallelbetween a common ESD electrode and each data line.

BRIEF DESCRIPTION OF THE FIGURES

Exemplary embodiments of the inventive concept will be described belowin more detail with reference to the accompanying drawings. Theembodiments of the inventive concept may, however, be embodied indifferent forms and should not be constructed as limited to theexemplary embodiments set forth herein. Like numbers refer to likeelements throughout.

FIG. 1 is a top plan view illustrating a display device in accordancewith an exemplary embodiment of the inventive concept.

FIG. 2A is a top plan view illustrating a first region (I) illustratedin FIG. 1 in accordance with an exemplary embodiment of the inventiveconcept.

FIG. 2B is a top plan view illustrating a second region (II) illustratedin FIG. 1 in accordance with an exemplary embodiment of the inventiveconcept.

FIG. 2C is a top plan view illustrating a third region (III) illustratedin FIG. 1 in accordance with an exemplary embodiment of the inventiveconcept.

FIG. 2D is a top plan view illustrating a fourth region (IV) illustratedin FIG. 1 in accordance with an exemplary embodiment of the inventiveconcept.

FIG. 3 is an equivalent circuit illustrating a first electrostaticprotection circuit ESD1 that may be included in FIG. 2A in accordancewith an exemplary embodiment of the inventive concept.

FIG. 4A is a circuit illustrating a bias state of a first thin filmtransistor of the display device in accordance with an exemplaryembodiment of the inventive concept when display device is manufactured.

FIG. 4B is a circuit illustrating a bias state of a first thin filmtransistor in accordance with an exemplary embodiment of the inventiveconcept when the display device is driven.

FIG. 5 is a circuit diagram illustrating a node voltage of a first thinfilm transistor in accordance with an exemplary embodiment of theinventive concept.

FIG. 6A is a waveform illustrating an example of current leakage of theturned-on a first thin film transistor.

FIG. 6B is a waveform illustrating a block effect of current leakage bya turned-off a first thin film transistor.

FIG. 6C is an enlarged view illustrating a part “A” of FIG. 6B.

DETAILED DESCRIPTION

The inventive concept will be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsthereof are shown. The inventive concept may, however, be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein. In the drawings, the size and relativesizes of layers and regions may be exaggerated for clarity. Like numbersrefer to like elements throughout.

FIG. 1 is a top plan view illustrating a display device in accordancewith an exemplary embodiment of the inventive concept. Referring to FIG.1, the display device 100 includes a first substrate 110 and a secondsubstrate 120. The first and second substrates 110 and 120 form adisplay panel of the display device 100. The display device 100 includesdata drivers DD1 and DD2, gate drivers GD1 and GD2, electrostaticprotection circuits ESD1 and ESD2 and a display area DA.

The data drivers DD1 and DD2 convert a video signal (not shown) intodata voltages and then output the data voltages to data lines (notshown) of the display panel. The data drivers DD1 and DD2 may output thedata voltages in response to a control signal supplied from a timingcontroller (not shown). The data drivers DD1 and DD2 may include a firstdata driver DD1 located on a left upper portion of the display device100 and a second data driver DD2 located on a right upper portion of thedisplay device 100.

The gate drivers GD1 and GD2 may output gate signals sequentially to thegate lines (not shown) of the display panel in response to a controlsignal supplied from the timing controller. The gate drivers GD1 and GD2are located in a peripheral area outside the display area DA. Forexample, the first gate driver GD1 is located to the left of the displayarea DA and the second gate driver is located to the right of thedisplay area DA. The gate drivers GD1 and GD2 may be formed by a thinfilm process. In an alternate embodiment, only one of the gate driversis present (e.g., GD1 or GD2).

The electrostatic protection circuits ESD1 and ESD2 are located at anupper portion and a lower portion of the display device 100,respectively, outside the display area DA. In an alternate embodimentonly one of the electrostatic protection circuits is present (e.g., ESD1or ESD2. The data lines transfer video signals from the data drivers DD1and DD2 to the display area DA. The electrostatic protection circuitsESD1 and ESD2 are connected to the data lines to protect against flow ofstatic electricity into the data lines when the display device 100operates or during manufacture of the display device 100. For example,each of the electrostatic protection circuits ESD1 and ESD2 may includean electrostatic diode that reduces the amount of electrostatic currentthat flows into the data lines. Each of the electrostatic protectioncircuits ESD1 and ESD2 may include an electrostatic transistor to handlethe remaining electrostatic current. The electrostatic transistor may bedamaged when the remaining electrostatic current is excessive, which mayprotect one or more thin film transistors TFT in the display area DA.

An electrostatic transistor included in the electrostatic protectioncircuits ESD1 and ESD2 may be implemented by a ticks thin filmtransistor. The ticks thin film transistor may receive a gate voltagefrom at least one of several power lines or signal lines that arelocated outside the display device 100. Hereinafter, a voltage that isapplied to a gate of the ticks thin film transistor and that turns offthe ticks thin film transistor is called a cut-off voltage Voff. A firstsupply voltage VSS1 used in the display device 100 using an amorphoussilicon gate (ASG) method may be used as the cut-off voltage Voff. Thefirst supply voltage VSS1 can be <=a ground voltage level used in adrive circuit of the display device 100. According to at least oneexemplary embodiment of the inventive concept, the first supply voltageis −7V. However, embodiments of the inventive concept are not limitedthereto, as the first supply voltage may vary considerably.

While the display device 100 operates, if the first supply voltage VSS1is applied to a gate of the first thin film transistor, the first thinfilm transistor may be turned off. Thus, while the display device 100operates, power consumption caused by a leakage current of theelectrostatic protection circuits ESD1 and ESD2 may be prevented.

Although not illustrated in FIG. 1, the display device 100 may include atiming controller. The timing controller receives a video signal and acontrol signal (not shown) from an external device to convert a dataformat of the video signal to a data format of the data drivers DD1 andDD2. The video signal may include red, green, and blue RGB data. Thetiming controller provides the formatted video signal to the datadrivers DD1 and DD2. Although not illustrated in FIG. 1, the timingcontroller may provide a data control signal to the data drivers DD1 andDD2. For example, the data control signal may include an output startsignal and a horizontal start signal. The timing controller may providea gate control signal to the gate drivers GD1 and GD2. For example, thegate control signal may include a vertical start signal, a verticalclock signal and an inverted vertical clock signal.

An electrostatic transistor included in the electrostatic protectioncircuits ESD1 and ESD2, is configured to capture static electricityflowing into a data line during a manufacturing process of the displaydevice 100. For example, excessive static electricity damages or causesa break in an electrostatic transistor during manufacturing instead of athin film transistor of a pixel. However, while the display device 100is driven, the electrostatic transistors cause a leakage current, whichincreases power consumption. According to at least one embodiment of theinventive concept, the electrostatic transistor can be configured toprevent this unintended power consumption while the display device 100is driven.

FIGS. 2A through 2D are top plan views illustrating corners of thedisplay device of FIG. 1. FIG. 2A is a top plan view illustrating afirst region (I) illustrated in FIG. 1 in detail. FIG. 2B is a top planview illustrating a second region (II) illustrated in FIG. 1 in detail.FIG. 2C is a top plan view illustrating a third region (III) illustratedin FIG. 1 in detail. FIG. 2D is a top plan view illustrating a fourthregion (IV) illustrated in FIG. 1 in detail.

Referring to FIG. 2A, portions of the first electrostatic protectioncircuit portion ESD1, the display area DA and the second gate driver GD2are illustrated in the first region (I) located at a left upper portionof the second substrate 120. The first electrostatic protection circuitportion ESD1 includes an electrostatic diode portion 121 a and anelectrostatic transistor portion 122 a.

Each of data lines DLs connected to thin film transistors of pixels inthe display area DA is connected to the first electrostatic circuitportion ESD1. The electrostatic diode portion 121 a, the electrostatictransistor portion 122 a and thin film transistors TFTs of the displayarea DA may be connected to each of the data lines DLs in parallel.According to an embodiment, the cut-off voltage Voff is supplied togates of transistors of the electrostatic transistor portion 122 a. Thecut-off voltage Voff may be, for example, the first supply voltage VSS1of about −7V. To supply the cut-off voltage Voff to the gates of thetransistors of the electrostatic transistor portion 122 a, any one ofpower lines or signal lines formed outside the display device 100 may beused. In the display device 100 using the ASG method, a power linesupplying the first supply voltage VSS1 (e.g., about −7V) may beconnected to the gates of transistors of the electrostatic transistorportion 122 a. In an alternate embodiment, a voltage generator (notshown) is located in the peripheral area outside the drawing area DA,which supplies the first supply voltage VSS1 via a power line thatconnects from the voltage generator to gates of the transistors of theelectrostatic transistor portion 122 a.

A storage voltage Vest (e.g., about 3.3V) may be supplied to gates ofthe transistors of the electrostatic transistor portion 122 a that areimplemented by thin film transistors TFTs of which the gate electrodeand the drain electrode are capacitively coupled. Accordingly, while thedisplay device 100 operates, thin film transistors of the electrostatictransistor portion 122 a are turned on. Thus, a leakage current occursin a common ESD electrode of the electrostatic transistor portion 122 aby a voltage of the data line DLs. However, thin film transistors of theelectrostatic transistor portion 122 a may be turned off by the cut-offvoltage Voff such as the first supply voltage VSS1. If the thin filmtransistors of the electrostatic transistor portion are turned off, aleakage current flowing through the thin film transistors may be cutoff. As a leakage current is cut off, power consumption may be reduced.

Referring to FIG. 2B, portions of the first electrostatic protectioncircuit portion ESD1, the display area DA and the first gate driver GD1that are connected to data lines DLs are illustrated in the secondregion (II) located at a right upper portion of the second substrate120. The first electrostatic protection circuit portion ESD1 includes anelectrostatic diode portion 121 b and an electrostatic transistorportion 122 b.

The first electrostatic protection circuit portion ESD1 is connected tothe data lines DLs that are connected to the thin film transistors ofthe display area DA. The electrostatic diode portion 121 b, theelectrostatic transistor portion 122 b and thin film transistors TFTs ofthe display area DA may be connected to each of the data lines DLs inparallel. The first supply voltage VSS1 (e.g., about −7V) may besupplied to gates of the electrostatic transistors 122 b as a cut-offvoltage Voff. The cut-off voltage Voff may be, for example, the firstsupply voltage VSS1 of about −7V. To provide a cut-off voltage Voff togates of the transistors of the electrostatic transistor portion 122 b,any one of power lines formed outside the display device 100 may beelectrically connected to the gates of the transistors of theelectrostatic transistor portion 122 b. In an embodiment, the power linefor supplying a cut-off voltage Voff to the first gate driver GD1 iselectrically connected to the gates of the transistors of theelectrostatic transistor portion 122 b by using a conductive line and acontact.

Referring to FIG. 2C, portions of the second electrostatic protectioncircuit portion ESD2, the display area DA and the second gate driver GD2are illustrated in the third region (III) located at a left lowerportion of the second substrate 120. The second electrostatic protectioncircuit portion ESD2 includes an electrostatic diode portion 123 a andan electrostatic transistor portion 124 a.

The second electrostatic protection circuit portion ESD2 is connected tothe data lines DLs connected to the thin film transistors of the displayarea DA. In an embodiment, the electrostatic diode portion 123 a, theelectrostatic transistor portion 124 a, and thin film transistors TFTsof the display area DA are connected to each of the data lines DLs inparallel. The cut-off voltage Voff may be supplied to gates of thetransistors of the electrostatic transistor portion 124 a. To supply thecut-off voltage Voff to the gates of the transistors of theelectrostatic transistor portion 124 a, the first supply voltage VSS1may be applied to a power line located outside the display device 100that is electrically connected to the gates. In an embodiment, the powerline for supplying the first supply voltage VSS1 to the second gatedriver GD2 is electrically connected to the gates of the transistors ofthe electrostatic transistor portion 124 a using a conductive line and acontact.

Referring to FIG. 2D, portions of the second electrostatic protectioncircuit portion ESD2, the display area DA and the first gate driver GD1are illustrated in the fourth region (IV) located at a right lowerportion of the second substrate 120. The second electrostatic protectioncircuit portion ESD2 includes an electrostatic diode portion 123 b andan electrostatic transistor portion 124 b.

The second electrostatic protection circuit portion ESD2 is connected tothe data lines DLs that are connected to the thin film transistors ofthe display area DA. In an embodiment, the electrostatic diode portion123 b, the electrostatic transistor portion 124 b and thin filmtransistors TFTs of the display area DA are connected to each of thedata lines DLs in parallel. The cut-off voltage Voff may be supplied togates of transistors of the electrostatic transistor portion 124 b. Tosupply the cut-off voltage Voff to the gates of the transistors of theelectrostatic transistor portion 124 b, any one line having a negativevoltage among various supply lines may be electrically connected to thegates of the transistors of the electrostatic transistor portion 124 b.

A storage voltage Vcst may be supplied to a gate of the transistors ofthe electrostatic transistor portion 124 b that are implemented by thinfilm transistors TFTs of which the gate electrode and the drainelectrode are capacitively coupled. Accordingly, while the displaydevice 100 operates, the electrostatic transistor portion 124 b maintaina turn-on state and charges charged in the data lines may be leakedthrough the thin film transistor TFTs. If the electrostatic transistorportion 124 b is turned off by providing the cut-off voltage Voff togates of the transistors of the electrostatic transistor portion 124 b,power consumption due to a leakage current may be prevented.

FIG. 3 is circuit illustrating an equivalent circuit of a firstelectrostatic protection circuit ESD1 and a display area illustrated inFIG. 2A. Referring to FIG. 3, the first electrostatic protection circuitportion ESD1 includes an electrostatic diode portion 121 a and anelectrostatic transistor portion 122 a. In an embodiment, thin filmtransistors connected to the data lines DLs and a gate line GL1 arearranged per unit pixel.

The electrostatic diode portion 121 a includes a plurality of bilateraldiodes BD1-BDn connected between each of the data lines DL1-DLn and acommon ESD electrode line VCOML. Each of the bilateral diodes BD1-BDnmay include a pair of diodes (or, a pair of transistors of which gatesand drains are connected together) that is connected to a data line in areverse direction and a forward direction respectively between the dataline DLx (e.g., x is an integer) and the common ESD electrode lineVCOML. For example, one of the diodes of the pair may be configured toonly pass or primarily pass current in one direction from a data line tothe common ESD electrode line VCOML, while the other diode only passesor primarily passes current in an opposite direction from the common ESDelectrode line VCOML to the data line. Each of the bilateral diodesBD2-BDn may have the same structure as the bilateral diode BD1. In analternate embodiment, each bilateral diode includes a single Zener diodeinstead of two separate diodes. A Zener diode allows current to flow inthe forward direction in the same manner as an ideal diode, but willalso permit it to flow in the reverse direction when the voltage isabove a certain value known as the breakdown voltage.

In an alternate embodiment, as discussed above, the bilateral diode BD1include two transistors T1 a and T1 b of which gates and drains areconnected together. A gate of the transistor T1 a is connected to thedata line DL1. Any one of drain and source of the transistor T1 a isconnected to the data line DL1 and the other is connected to the commonESD electrode line VCOML. A gate of the transistor T1 b is connected tothe common ESD electrode line VCOML. Any one of drain and source of thetransistor T1 b is connected to the data line DL1 and the other isconnected to the common ESD electrode line VCOML.

According to the above-described connections, the transistor T1 aoperates as a diode connected in a forward direction from the data lineDL1 to the common ESD electrode line VCOML and the transistor T1 boperates as a diode connected in a reverse direction from the data lineDL1 to the common ESD electrode line VCOML. Each of the bilateral diodesBD2-BDn may have the same structure as the bilateral diode BD1.

When a high voltage is applied to the data line DL1 due to staticelectricity, the bilateral diode BD1 may discharge charges charged inthe data line DL1 to the common ESD electrode line VCOML. For example,if an electric potential of the data line DL1 becomes higher than athreshold voltage of the bilateral diode BD1, the bilateral diode BD1 isturned on. The data line DL1 and the common ESD electrode line VCOML areelectrically connected to each other. By the electrical connection,charges charged in the data line DL1 flow into the common ESD electrodeline VCOML.

An electric potential of the common ESD electrode line VCOML may beincreased by the charges that flowed into the common ESD electrode lineVCOML from the data line DL1. Diodes connected in a forward directionfrom the common ESD electrode line VCOML to the data lines DL2-DLn areturned on when the electric potential of the common ESD electrode lineVCOML is increased. Thus, the charges that flowed into the common ESDelectrode line VCOML are distributed to the data lines DL2-DLn.Accordingly, thin film transistors of pixels of the display area DA maybe protected from a shock caused by static electricity that flowed intothe data line DL1.

If an electric potential of the data line DL1 is lower than a thresholdvoltage of the bilateral diode BD1, the bilateral diode BD1 may maintaina turn-off state and the data line DL1 is electrically cut off from thecommon ESD electrode line VCOML. Through the structure described above,the electrostatic diode portion 121 a may distribute charges flowinginto the data lines DL1-DLn by static electricity. Thus, elementslocated at the display area DA may be protected from an effect of staticelectricity transferred through the data lines DL1-DLn.

The electrostatic transistor portion 122 a includes a plurality of thinfilm transistors connected to the data lines DL1-DLn. Each of the thinfilm transistors may be, for example, a first thin film transistor TFT.Each of the thin film transistors may be represented by an equivalentcircuit of a transistor and a capacitor. A structure and a function ofthe electrostatic transistor portion 122 a will be described through astructure of thin film transistors TFT1-TFT10 connected to the data lineDL1.

A first thin film transistor TFTI connected to the data line DL1 may beequivalently represented by a transistor T1 and a capacitor C. A cut-offvoltage Voff is applied to a gate of the transistor T1. A drain (or,source) of the transistor T1 is connected to the data line DL1 and asource (or drain) of the transistor T1 is connected to the common ESDelectrode VCOMM. The capacitor C1 is connected to the common ESDelectrode VCOMM and the gate of the transistor T1. The common ESDelectrode VCOMM may maintain a floating state even while the displaydevice is manufactured or is driven. The thin film transistorsTFT2-TFT10 may be equivalently represented by the same elements as thefirst thin film transistor TFT1.

While manufacturing the display device, gates of the thin filmtransistors TFT1-TFT10 are maintained in an electrically isolatedfloating state. In an embodiment, the common ESD electrode VCOMM of thethin film transistors TFT1-TFT10 is maintained in a floating state. Atthis time, static electricity of a high voltage may flow into the dataline DL1 to cause charges to be transferred to the display area DA viathe data line. However, the common ESD electrode VCOMM has a relativelylow voltage as compared to the data line DL1. Capacitors formed betweenthe data line DL1 and the common ESD electrode VCOMM sequentially breakwith the charge transfer. The broken capacitors may cause a shortcircuit between the data line DL1 and the common ESD electrode VCOMM.Charges induced by static electricity are discharged into the common ESDelectrode VCOMM and an electric potential of the data line DL1 may belowered. Through the above-mentioned procedure, a high voltage by staticelectricity may be prevented from being transferred to the display areaDA. The electrostatic transistor portion 122 a operates in the samemanner with respect to the data lines DL2-DLn and elements of thedisplay area DA may be protected from static electricity.

According to at least one embodiment of the inventive concept, when amanufacturing process of the display device 100 is finished, a cut-offvoltage Voff is supplied to gates of the thin film transistors includedin the electrostatic transistor portion 122 a. When the display device100 is manufactured, a routing process may be used to route metal linesfor transferring the cut-off voltage Voff to a gate of transistors ofthe thin film transistor. For example, if the display device 100 isdriven, the cut-off voltage Voff is supplied to the gates of the thinfilm transistors.

In an embodiment, the cut-off voltage Voff is supplied from a power linehaving a level lower than a threshold level (e.g., −2V). The power linemay be located outside the display device 100. For example, a displaydevice manufactured by an amorphous silicon gate integration technologycan use a first power supply voltage VSS1 (e.g., about −7V). In anembodiment, a power line for supplying the first power supply voltageVSS1 is connected to gates of the thin film transistors. While thedisplay device is driven, the first power supply voltage VSS1 is appliedto the gates of the thin film transistors as a cut-off voltage Voff andeach of the thin film transistors T1-T10 is turned off. Thus, an effectof cutting off charges flowing into channels of the thin filmtransistors T1-T10 may be enhanced.

An active region including pixels is formed in the display area DA. Whenmanufacturing the display device 100, static electricity flowing intothe thin film transistors of the active region may be absorbed or cutoff by the electrostatic transistor portion 122 a. When the displaydevice 100 is driven, the cut-off voltage Voff is supplied to gates ofthe thin film transistors of the electrostatic transistor portion 122 a.A charge leakage by the electrostatic transistor portion 122 a may becut off when the display device 100 is driven. Thus, by controlling agate voltage of the electrostatic transistor portion 122 a, the devicemay be protected from electrostatic electricity and power efficiency maybe improved.

FIGS. 4A and 4B are equivalent circuits illustrating bias states of athin film transistor included in one of the above-describedelectrostatic transistor portions. FIG. 4A illustrates a bias state ofthin film transistor when the display device 100 is manufactured. FIG.4B illustrates a bias state of thin film transistor when the displaydevice 100 is driven.

An equivalent circuit of the first thin film transistor TFT1 illustratedin FIG. 3 and a bias state of the first thin film transistor TFT1 whenthe display device is manufactured is illustrated in FIG. 4A. As shownin FIG. 4A, the gate electrode of the first thin film transistor TFT1 iscapacitively coupled to the drain electrode of the first thin filmtransistor TFT1. A capacitor C1 between the gate node and drain nodedepicts the equivalent modeling of the capacitive connection. Thecapacitive connection between the gate node and drain node of the firstthin film transistor TFT1 is different from a diode connection whichdirectly connects the gate node and drain node of transistor via acontact.

When an electrical connection for the electrostatic transistor portion122 a is not finished, a gate of the first thin film transistor TFT1 iselectrically isolated. Thus, a gate of transistor T1 in an equivalentcircuit of the first thin film transistor TFT1 is maintained in afloating state. A common ESD electrode VCOMM has a floating state thatis electrically isolated when the transistor T1 is turned off.

During manufacturing of the display device 100, if a high voltage (e.g.,several kilovolts) due to static electricity flows into the data lineDL1, a drain voltage of the transistor T1 becomes excessively high.Accordingly, the transistor T1 is turned on and a channel is formed.Charges passing through the channel of the transistor T1 are charged inthe capacitor C1, which may electrically break due to the relativelyhigh voltage. Through that procedure, charges transferred to the dataline DL1 may be absorbed by a plurality of thin film transistors. Thus,an electric potential of the data line DL1 becomes gradually lower andpixel elements of the display area DA may be protected from staticelectricity.

An equivalent circuit of the first thin film transistor TFT1 illustratedin FIG. 3 and a bias state of the first thin film transistor TFT1 whenthe display device is driven are illustrated in FIG. 4B. Theelectrostatic transistor portion 122 a is configured so that the cut-offvoltage Voff is supplied to a gate of the first thin film transistorTFT1 during manufacturing of the display device 100. While the displaydevice 100 is driven, the cut-off voltage Voff is supplied to a gate ofthe first thin film transistor TFT1. When the display device 100 isnormally driven, drive signals (e.g., −7.8V) are applied to the dataline DL1.

However, the transistor T1 may maintain a turn-off state due to thecut-off voltage Voff. Thus, when the data line DL1 is driven in a normalvoltage range, leakage currents of the thin film transistors includingthe first thin film transistor TFT1 may be cut off. Even when a drivesignal is applied to the data lines DL1-DLn, a leakage current in theelectrostatic transistor portion 122 a may be cut off.

FIGS. 5, 6A and 6B are used to illustrate the effect of reduced powerconsumption caused by an electrostatic transistor portion in accordancewith an exemplary embodiment of the inventive concept. FIG. 5 is anequivalent circuit for describing a thin film transistor included in theelectrostatic transistor portion. FIG. 6A is a waveform illustrating anoperation of the thin film transistor when a cut-off voltage Voff is notprovided. FIG. 6B is a waveform illustrating an operation of the thinfilm transistor when a cut-off voltage Voff is provided.

Referring to FIG. 5, a bias state occurs when the first thin filmtransistor TFT1 is driven. The bias state of the first thin filmtransistor TFT1 is determined by a gate voltage Vg and a voltage of thedata line DL1 corresponding to a drain voltage or a source voltage. Whenthe cut-off voltage Voff is supplied as the gate voltage Vg to a gate ofthe first thin film transistor TFT1, a charge leakage may not occur at afirst node N1. Thus, when the cut-off voltage Voff is supplied as thegate voltage Vg of the first thin film transistor TFT1, an electricpotential of the first node N1 is not greatly changed.

When the cut-off voltage Voff is not supplied as the gate voltage Vg ofthe first thin film transistor TFT1, a leakage current may flow to thefirst node N1 by the voltage of the data line DL1. Thus, if thetransistor T1 is turned on, an electric potential of the data line DL1is similar to an electric potential of the first node N1. Accordingly, acurrent leakage occurs in the common ESD electrode VCOMM. According toat least one exemplary embodiment of the inventive concept, a cut-offvoltage Voff that can sufficiently turn off the transistor T1 issupplied as the gate voltage Vg of the first thin film transistor TFT1to cut off the current leakage. As an example, the cut-off voltage Voffmay be about −7V.

FIG. 6A is a waveform illustrating an operation of the thin filmtransistor when a cut-off voltage Voff is not provided. Referring toFIG. 6A, a first node voltage VN1 is illustrated when a drive signalVDL1 is applied to the data line DL1 and a storage voltage Vest of about3.3V is applied as the gate voltage Vg to a gate of the first thin filmtransistor TFT1. In an embodiment, the drive signal VDL1 is a bipolarvoltage that swings between two different voltage levels (e.g., fromabout −7.8V to about 7.8V). If a storage voltage Vcst is supplied as thegate voltage Vg, the transistor T1 is turned on. Thus, the sourcevoltage and the drain voltage of the transistor T1 may have almost thesame value.

The first node voltage VN1 corresponding to the source or drain of thetransistor T1 will swing in a manner similar to or the same as the dataline DL1. Even when a voltage drop by a threshold voltage of thetransistor T1 is considered, the first node voltage VN1 is still asimilar level to that of the drive signal VDL1 of the data line DL1. Asillustrated in FIG. 6A, a waveform of the first node voltage VN1 mayhave the same waveform as the drive signal VDL1. Thus, a current leakoccurs through a channel of the transistor T1 and power is consumed bythe current leakage.

FIG. 6B is a waveform illustrating an operation of the thin filmtransistor when a cut-off voltage Voff is provided. Referring to FIG.6B, the drive signal VDL1 is applied to the data line DL1 and the cutoff voltage Voff (e.g., about −7V) is applied as the gate voltage Vg ofthe first thin film transistor TFT1. A first node voltage VN1 of thetransistor T1 is illustrated.

The drive signal VDL1 supplied to the data line DL1 may be a bipolarvoltage that swings between two different voltage levels (e.g., fromabout −7.8V to about 7.8V). If the cut-off voltage Voff is supplied asthe gate voltage Vg, the transistor T1 maintains a turn-off stateregardless of a level of the drive signal VDL1. Thus, a source and adrain of the transistor T1 maintain an electrically isolated state.

When the cut-off voltage Voff is supplied, the first node voltage VN1corresponding to the source or drain of the transistor T1 may maintain afloating state such that the first node N1 is electrically isolated fromthe data line DLL In at least one embodiment, it is desirable that acurrent leakage is not generated from the data line DL1 and the firstnode voltage VN1 maintains a level of 0V. Even though the transistor T1maintains a turn-off state by continuously applying the drive signalVDL1 to the data line DL1, a very small amount of charge may flow intothe common ESD electrode VCOMM. However, the amount of charge flowinginto the common ESD electrode VCOMM is negligible. A very small changeof the first node voltage VN1 when the cut-off voltage Voff is suppliedis illustrated in part “A”. As illustrated in part “A”, at a time T1,even though the first node voltage VN1 is increased by a small level(e.g. by about 0.16V) due to the very small amount of charge that flowedin, a continuous charge leakage may not occur.

FIG. 6C is an enlarged view illustrating part “A” of FIG. 6B in detail.Referring to FIG. 6C, an electrical potential of the common ESDelectrode VCOMM is increased by charges accumulated by continuouslyapplying the drive signal VDL1 to the data line DL1. However, anelectrical potential of the common ESD electrode VCOMM is negligiblychanged by the small amount of current leakages. For example, as shownin FIG. 6C, the electrical potential is increased by only about 0.16V.Thus, power consumption in the common ESD electrode VCOMM by a leakagecurrent is negligible.

By applying the cut-off voltage Voff, a current leakage through achannel of the transistor T1 is greatly reduced and unintended powerconsumption in the electrostatic transistor portion 122 a may beprevented.

According to at least one exemplary embodiment of the inventive concept,power consumption of a display device may be reduced by removing a pathof leakage current generated when the display device is driven.

Although exemplary embodiments of the present inventive concept havebeen shown and described, it will be appreciated that various changesmay be made in these embodiments without departing from the spirit andscope of the inventive concept.

1. A display device comprising: a data line transferring a drive signalto a display area of the display device; an electrostatic transistorportion including a plurality of thin film transistors connected inparallel between the data line and a common ESD electrode of the displaydevice, wherein a cut-off voltage for turning off each of the thin filmtransistors is supplied to a gate of each of the thin film transistors.2. The display device of claim 1, wherein the gate electrode and thedrain electrode of each of the thin film transistors are capacitivelycoupled.
 3. The display device of claim 1, wherein the cut-off voltageis supplied from at least one of a plurality of power lines and drivesignal lines that are disposed outside the display device.
 4. Thedisplay device of claim 1, wherein the cut-off voltage is about −7V. 5.The display device of claim 1, wherein the cut-off voltage is <=about−2V.
 6. The display device of claim 1, further comprising anelectrostatic diode that is connected to the data line and distributesstatic electricity flowing in the data line to other data lines.
 7. Amethod of manufacturing a display device including an electrostaticprotection circuit connected to a data line supplying a drive signal toa display area, the method comprising: forming a plurality of thin filmtransistors connected in parallel between the data line and a common ESDelectrode; and forming a conductive line for applying a cut-off voltagefor turning off each of the thin film transistors to a gate of each ofthe thin film transistors.
 8. The method of claim 7, wherein theconductive line is formed between a power line for providing a supplyvoltage having a negative voltage value and a gate of each of the thinfilm transistors.
 9. The method of claim 7, wherein the cut-off voltageis <=about −2V.
 10. The method of claim 7, wherein each of the pluralityof thin film transistors is thin film transistor of which a gateelectrode and a drain electrode are capacitively coupled.
 11. A displaydevice comprising: a plurality of data lines configured to receiverespective data voltages; a plurality of pixels connected respectivelyto the data lines; an electrode line; a plurality of bilateral diodes,wherein each bilateral diode is connected between a corresponding one ofthe data lines and the electrode line; and a plurality of thin filmtransistors connected in parallel between a common ESD electrode andeach data line.
 12. The display device of claim 11, wherein a gateelectrode and a drain electrode of each of the thin film transistors arecapacitively coupled.
 13. The display device of claim 11, wherein eachbilateral diode comprises: a first diode configured to pass currentprimarily from a corresponding one of the data lines to the electrodeline; and a second diode configured to pass current primarily from theelectrode line to the one data line.
 14. The display device of claim 13,wherein electrode line is commonly connected to all the second diodes.15. The display device of claim 11, wherein each bilateral diodecomprises a pair of transistors of which gates and drains are connectedtogether.
 16. The display device of claim 11, wherein each bilateraldiode comprises: a first transistor; and a second transistor, wherein agate terminal and a first non-gate terminal of the first transistor, anda first non-gate terminal of the second transistor, are each connectedto a first one of the data lines, wherein a second non-gate terminal anda gate terminal of the second transistor, and a second non-gate terminalof the first transistor, are each connected to the electrode line. 17.The display device of claim 11, wherein the pixels are located in adisplay area, and each of the bilateral diodes and thin film transistorsare located in a peripheral area outside the display area.
 18. Thedisplay device of claim 11, further comprising a capacitor in parallelwith each of the thin film transistors.
 19. The display device of claim11, further comprising a voltage generator configured to apply a voltageto each gate terminal of the thin film transistors to turn-off thetransistors.
 20. The display device of claim 19, wherein the voltage is<=about −2 v.